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| (R) STPAC01F2 IPADTM RF DETECTOR FOR POWER AMPLIFIER CONTROL MAIN PRODUCT CHARACTERISTICS The STPAC01F2 has two outputs, one for the signal detection and another one for the temperature compensation: VDCout = 0.88 V at 0.85 GHz at 10 dBm VDCout = 1.07 V at 1.85 GHz at 10 dBm Vsupply = 5 V max Lead free package Flip-Chip (8 Bumps) Table 1: Order Code Part Number STPAC01F2 DESCRIPTION The STPAC01F2 is an integrated RF detector for the power control stage. It converts RF signal coming from the coupler into a DC signal usable by the digital stage. It is based on the use of two similar diodes, one providing the signal detection while the second one is used to provide a temperature information to thermal compensation stage. A biasing stage suppresses the detection diode drop voltage effect. Target applications are cellular phones and PDA using GSM, DCS, PCS, AMPS, TDMA, CDMA and 800 MHz to 1900 MHz frequency ranges. BENEFITS Marking RA Figure 1: Pin Configuration (Ball side) 3 DC out Gnd1 2 V Temp Gnd1 Gnd1 1 A Gnd2 Bias B C The use of IPAD technology allows the RF front-end designer to save PCB area and to drastically suppress parasitic inductances. RFin Figure 2: Functional diagram Coupler VBIAS RF input RF detector Low pass filter Thermal compensation STPAC01F2 GND1 GND2 VDCOut Vtemp October 2004 REV. 1 1/7 STPAC01F2 Table 2: Absolute Retings (Tamb = 25C) Symbol VBIAS PRF FOP VPP TOP TSTG Bias voltage RF power at the RF input Operating frequency range ESD level as per MIL-STD 883E method 3015.7 notice 8 (HBM) Operating temperature range Storage temperature range Parameter and test conditions Value 5 20 0.8 to 2 250 - 30 to + 85 - 55 to + 150 Unit V dBm GHz V C C ELECTRICAL CHARACTERISTICS (Tamb = 25C) Table 3: Parameters related to BIAS voltage Symbol VBIAS IBIAS Parameter Operating bias voltage Bias current VBIAS = 3.2 V Test conditions Min. 2.2 Typ. Max. 3.2 0.5 Unit V mA Table 4: Parameters related detection function (VBIAS + 2.7 V, DC output load = 100k) Symbol VDCout Parameter DC output voltage (see fig. 1, IDC = 50 A) Test conditions F = 1.85 GHz, PRF = 10 dBm F = 1.85 GHz, PRF = - 20 dBm F = 0.85 GHz, PRF = 10 dBm F = 0.85 GHz, PRF = - 20 dBm VDCout DC output voltage variation (see fig. 8, IDC = 50A) 0 < Tamb < 70C F = 1.85 GHz, PRF = 10 dBm 2.2 < VBIAS < 3.2 V F = 1.85 GHz, PRF = 10 dBm Min. 0.97 1.83 0.78 1.83 Typ. 1.07 1.93 0.88 1.93 0.09 0.44 Max. 1.17 2.03 0.98 2.03 V Unit V Table 5: Parameters related to detection function Symbol VTemp VTemp Parameter Temperature output voltage (see fig. 9) Temperature output voltage variation (see fig. 9) Test conditions IDC = 50A IDC = 50A, 0 < Tamb < 70C IDC = 50A, 2.2 < VBIAS < 3.2V Min. 1.83 Typ. 1.93 0.09 0.44 Max. 2.03 Unit V V 2/7 STPAC01F2 Figure 3: Application diagram Coupler VBIAS RF input RF detector Low pass filter Thermal compensation STPAC01F2 IDC = 50A GND1 GND2 IDC = 50A VDCOut Vtemp + Out The STPAC01 is the first part of the power amplifier stage and provides both RF power and die temperature measurements. The above figure gives the basic circuit of RF detector. A coupler located on the line between RF amplifier output and the antenna takes a part of the available power and applies it to STPAC01 RF input. The RF detector and the low pass filter provide a DC voltage depending on the input power. Thermal compensation provides a DC voltage depending on the ambient temperature. As the detection system and the thermal compensation are based on the same topology, VDCout will have the same temperature variation as Vtemp. Connected to a differential amplifier, the output will be a voltage directly linked to the RF input power. VDCout and Vtemp must be bias with 50A DC current. This topology offers the most accurate output value as it is 100% compensated. Figure 4: VDCout measurement circuit Figure 5: VDCout versus RF input power VDCout RF generator RF in STPAC test board VDCOut 2 Multimeter 1.8 1.6 1.4 1.2 Tamb = 25C Ibias = 50A Vbias = 2.7V Power supply VBIAS DC output voltage 1850MHz 850MHz Current generator IDC 1 0.8 -20 -15 -10 -5 Pin (dBm) 0 5 10 3/7 STPAC01F2 Figure 6: Relative variation of VDCout versus frequency (from 800 to 900 MHz) VDCout (Freq.) / VDCOut (850MHz) 1.05 Figure 7: Relative variation of VDCout versus frequency (from 1800 to 1900 MHz) VDCout (Freq.) / VDCOut (850MHz) 1.05 1 1 0.95 0.95 0.9 800 825 850 Frequency in MHz 875 900 0.9 1800 1825 1850 Frequency in MHz 1875 1900 Figure 8: Temperature effect measurement circuit on VDCout Climatic chamber RF generator RF in STPAC test board VDCOut Multimeter Figure 9: Vtemp measurement circuit Climatic chamber STPAC test board Vtemp Multimeter Temp. voltage Power supply VBIAS DC output voltage Power supply VBIAS Current generator IDC Current generator IDC Figure 10: Vtemp output ambient temperature voltage versus Vtemp 1.98 Ibias = 50A 1.96 1.94 1.92 1.9 1.88 0 10 20 30 40 50 60 70 Tamb (C) 4/7 STPAC01F2 Figure 11: FLIP-CHIP Package Mechanical Data 500m 50 650m 65 315m 50 500m 50 1.57mm 50m Figure 12: Foot print recommendations Copper pad Diameter : 250m recommended , 300m max Solder stencil opening : 330m Solder mask opening recommendation : 340m min for 300m copper pad diameter Figure 13: Marking Dot, ST logo xx = marking z = packaging location yww = datecode (y = year ww = week) 365 1.57mm 50m 240 365 E xxz y ww 40 220 All dimensions in m 5/7 STPAC01F2 Figure 14: FLIP-CHIP Tape and Reel Specification Dot identifying Pin A1 location 4 +/- 0.1 O 1.5 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1 0.73 +/- 0.05 All dimensions in mm 8 +/- 0.3 STE STE STE xxz yww User direction of unreeling xxz yww xxz yww 4 +/- 0.1 Table 6: Ordering Information Ordering code STPAC01F2 Marking RA Package Flip-Chip Weight 3.3 mg Base qty 5000 Delivery mode Tape & reel 7" Note: More informations are available in the application notes: AN1235: "Flip-Chip: Package description and recommendations for use" AN1751: "EMI Filters: Recommendations and measurements" Table 7: Revision History Date 21-Oct-2004 Revision 1 First issue Description of Changes 6/7 STPAC01F2 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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